SSI Solaris 100 RTA system

The SSI Solaris100 is a Rapid Thermal Processing (RTP) system, which uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures. ……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

• Sample sizes: Small pieces, 2″, 3″, 4″ and small pieces
• Ramp up rate: Programmable, 10°C to 150°C per second
• Recommended steady state duration: Unlimited, dependent on temperature and cooling
• Ramp down rate: Non-programmable, max 150°C per second
• Recommended steady state temperature range: 150°C – 1200°C
• Gases available: Ar, O₂, N₂ and forming gas (5% H₂/95% N₂)

Key Applications and available processes

• Silicide formation                      
• Ion Implant activation
• Polysilicon Annealing
• Ti/Au Ohmic Contac formation                      
• Contact Alloying
• Oxidation and Nitridization
• GaAs and III-V Ohmic Alloying

General Documentation

RTA SOP (standard operation procedure)