SSI Solaris 100 RTA system

The SSI Solaris100 is a rapid thermal processing (RTP) system, which is uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures. ……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

  • Sample sizes: Small pieces, 2″, 3″, 4″ and small pieces
  • Ramp up rate: Programmable, 10°C to 150°C per second
  • Recommended steady state duration: Unlimited, dependent on Temp. & cooling
  • Ramp down rate: Non-programmable, max 150°C per second
  • Recommended steady state temperature range: 150°C – 1200°C
  • Gases available: Ar, O2, N2 and forming gas (5% H2/95% N2)

Key Applications and available processes

  • Silicide formation                      
  • Ion Implant activation
  • Polysilicon Annealing
  • Ti/Au Ohmic Contac formation                      
  • Contact Alloying
  • Oxidation and Nitridization
  • GaAs and III-V Ohmic Alloying

General Documentation

RTA SOP (standard operation procedure)

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Equipment Fee
Fabrication Service 1