Jeremy Levy Professor, Physics & Astronomy
Research
Quantum transport and information processing in oxides and silicon
Keywords: oxide nanoelectronics quantum dots quantum transport
We explore novel electronic phenomena in solid state systems, in order to provide the physical foundations for future technologies. In particular, we are interested in quantum information processing and quantum computation, nanoscale control over the metal-insulator transition in polar/non-polar oxide heterostructures, formation of quantum dots by “directed self-assembly,” and the development of novel optical and scanning probe techniques.
Much of what we do currently involves the investigation of properties of nanoscale devices formed from the 2DEG at interfaces of insulating oxides. We have developed a technique for controlling the metal-insulator transition at the interface of LaAlO3 and SrTiO3, by applying a voltage to the tip of a conducting atomic force microscope. This allows us to design and study nanoelectronic devices whose components have widths approaching one nanometer. In this regime, we study a diverse range of interesting physics, including superconductivity, spin-orbit interactions, photoconductivity, and other characteristics of quantum transport.
We have also developed a patterning process for template growth of Ge islands on Si. We are investigating spintronic behavior in electron exchange-coupled quantum dots. These structures are template at NFCF by e-beam induced deposition. Their properties are measured using the NFCF dilution refrigerator at temperatures down to 20 mK.
