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Plasma Enhanced Chemical Vapor Deposition (PECVD)
The Trion Technology Orion III PECVD (Plasma Enhanced Chemical Vapor Deposition) system utilizes plasma to significantly lower the temperatures at which a given film is deposited on a substrate. The Orion III can be used for the controlled deposition of SiNx, SiO2, and SiOxNy films.
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Key Features
- 300Watts (350-460kHz) bottom-powered electrode
- Substrates up to 5” wafers
- Temperature control from 250 °C to 400 °C
- High temperature electrode up to 400 °C
- Optimized shower head for uniform deposition
- Gases available: O2, SiH4 5% N2, N2, CF4
Key Applications and available processes
- Semiconductor fabrication
- R & D production and application
- Stress controlled silicon nitride and silicon dioxide film deposition
- MEMS
General Documentation
PECVD system SOP (standard operation procedure)
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Equipment Fee
Fabrication Service 1