APEX ICP-RIE Etcher Fluorine
APEX ICP-RIE etcher Fluorine
The Plasma-Therm APEX ICP (Inductively Coupled Plasma) RIE Fluorine Etch is an etching system which uses Fluorine based chemistries to etch Si, SiO2, SiN and other materials.
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Key Features
· Gases available: CF4, CHF3, SF6, CH4, H2, O2, Ar, N2, He
· ICP generator: 2000 W at 2 MHz
· RF generator: 600 W at 13.56 MHz
· Laser endpoint
· Mechanical clamp w/ He backside cooling
· Platen temperature -40C to 250C
· Sample size: small pieces up to 4″ wafers
· Load locked
· Materials etched: Si, SiO2, SiN, SiC, Ti, W, low-k dielectrics
Key Applications and available processes
· MEMS
· Si, SiO2, SiN, SiC
General Documentation
APEX ICP-RIE etcher (Fluorine) system SOP (standard operation procedure)
Contact
Esta Abelev, Jun Chen, or Matt France
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Equipment Fee
Fabrication CR Service 3
