Angstrom Engineering Sputtering System

Angstrom Engineering Sputtering System

Angstrom Engineering sputtering system equipped with four magnetron sputtering guns which uses accelerated, positively charged ions from a plasma source to deposit films with an increased deposition rate. ……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

  • 4 Onix 3” Sputter Sources – one sputter source capable depositing magnetic materials
  • Base pressure <2x10-7 Torr (approximately 20 mins to 5×10E-6 Torr)
  • Substrates up to 4”
  • DC, pulsed DC (1000W) and RF (600W) generators
  • Switch for Sputter Power Supply - Allows 1 power supply to be shared between 2 sources
  • Advanced Downstream Gas Pressure Control – Reactive sputtering (O2, N2, Ar)
  • RF Stage Bias - 100W
  • Deposition Rate Sensor and PC Based Deposition Rate and Film Thickness Control
  • Substrate heating(to 850C) and biasing

Key Applications and available processes

  • Metal, oxide and nitrides thin film coatings
  • Currently available targets: Fe, Al, Ti, W, Ag, Mo, Al2O3, TiO2, WO3, SiO2, SixNy, Ge2Sb2Te5, GeTe, Sb2Te3

General Documentation

Angstrom Sputtering system SOP (standard operation procedure)

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Equipment Fee
Fabrication Service 2