Ultratech/Cambridge Fiji G2 Plasma-Enhanced ALD

The Ultratech Fiji G2 plasma system is a high-vacuum atomic layer deposition system with the capacity to deposit thin films to an atomically specified thickness. This system accommodates plasma enhanced and thermal deposition modes, while using a flexible system architecture that permits multiple configurations of precursors and plasma gases.

……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

• Substrates up to 200 mm, height limitation up to 2 cm (~1inch)
• Wafers to 8”
• Flow-optimized ALD chamber for thermal or plasma deposition
• Substrate temperatures to 450 °C
• Uniform coverage for plasma deposited films (on aspect ratios of 20:1)
• Process Modes: Thermal Continuous Mode for high speed depositions, Thermal Expo Mode with stop valve operation for ultra-high aspect ratio structures (> 450:1), and Plasma Mode for difficult nitrides and metals
• All system parameters can be controlled in recipe (e.g. substrate and precursor temperatures, gas mass flows, pulse times, etc.)
• High conformity coatings
• Near monolayer growth conditions
• Precursors available: Hf, Ti, Al, Ni, Si

Key Applications and available processes

• High quality films for organic semiconductors and others
• Used in LED and III - V devices
• MEMS
• Optoelectronics

General Documentation

PE-ALD system SOP (standard operation procedure)