Ultratech/Cambridge Fiji G2 Plasma-Enhanced ALD

The Ultratech Fiji G2 plasma system is a high-vacuum ALD (Atomic Layer Deposition) system accommodates plasma enhanced and thermal deposition modes while using a flexible system architecture that permits multiple configurations of precursors and plasma gases. ……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

  • Substrates up to 200 mm, height limitation up to 2 cm (~1inch)
  • Wafers to 8”
  • Flow-optimized ALD chamber for thermal or plasma deposition
  • Substrate temperatures to 450 °C
  • Uniform coverage for plasma deposited films (on aspect ratios of 20:1)
  • Process Modes: Thermal Continuous Mode for high speed depositions, Thermal Expo Mode with stop valve operation for ultra-high aspect ratio structures (> 450:1), and Plasma Mode for difficult nitrides and metals
  • All system parameters can be controlled in recipe (e.g. substrate and precursor temperatures, gas mass flows, pulse times, etc.)
  • High conformity coatings
  • Near monolayer growth conditions
  • Precursors available: Hf, Ti, Al, Ni, Si

Photo of the PE-ALD

Key Applications and available processes

  • High quality films for organic semiconductors and others
  • Used in LED and III - V devices
  • MEMS
  • Optoelectronics

 

General Documentation

PE-ALD system SOP (standard operation procedure)

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Equipment Fee

Fabrication Service 2