Raith e-LiNE Electron Beam Lithography

The Raith e-LiNE is an electron beam lithography tool. It uses thermal field emission filament technology and a laser-interferometer controlled stage.  The system is equipped with a load lock, an automatic height laser sensor, an In-lens detector and a SE2 detector. Typically, large design patterns are divided into small writing fields, which are then stitched together to form the final pattern. The standard writing field size is 100 um square, with 2 nm pixel size. Within one writing field, the ebeam is deflected to expose one pixel after another sequentially. 

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Key Features

  • Accelerating Voltage: 0.5-30kV
  • Beam Waist: sub 1.6nm
  • Min. Grating Periodicity: 40nm
  • Min. Linewidth: 8nm.
  • Overlay Accuracy: 40nm.
  • Travel range: 100x100mm

Key Applications and available processes

  • Semiconductor applications
  • MEMS

General Documentation

Raith e-LINE EBL SOP (standard operation procedure)

Photo of the EBL

 

Contact

Jun Chen or Matt France

 

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Equipment Fee

Fabrication Service 2