Raith e-LiNE Electron Beam Lithography
The Raith e-LiNE is an electron beam lithography tool which utilizes thermal field emission filament technology and a laser-interferometer controlled stage. The system is equipped with a load lock, an automatic height laser sensor, and both In-lens and SE2 detectors. The Raith e-LiNE exposes designs that require a high degree of resolution by dividing the design into small writing fields. The standard writing field size is 100 μm, and the electron beam sequentially exposes single pixels (2 nm) before stitching the writing fields together to form the final pattern.
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Key Features
- Accelerating Voltage: 0.5-30kV
- Beam Waist: sub 1.6nm
- Min. Grating Periodicity: 40nm
- Min. Linewidth: 8nm.
- Overlay Accuracy: 40nm.
- Travel range: 100x100mm
Key Applications and available processes
- Semiconductor applications
- MEMS
General Documentation
Raith e-LINE EBL SOP (standard operation procedure)
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Equipment Fee
Fabrication Service 2
