Pulse Laser Deposition System (PLD 3000)

The Pulse Laser Deposition System (PLD 3000) provides uniform single and multilayer films deposited by PLD over substrates up to 3 inches in diameter. These systems include complete software packages and can be used to grow combinatorial thin films as well.

……………………………………………………………………………………………………………………………………………………………………………………………………………………………..

Key Features

  • Maximum Substrate - Can handle one 3” wafer or multiple smaller samples per customer requirement.
  • Maximum Substrate Temperature 950°C (in oxygen) for non-transparent substrates (such as silicon) and 850°C for transparent substrates (such as LaAlO3).
  • Temperature Uniformity ± 3°C across 3” diameter Si substrate.
  • Operating Pressure Range 5 x 10-7 Torr base to 300 mTorr.
  • Target Size 2” diameter targets.
  • Film Thickness Uniformity ± 5% over 90%.
  • Target to Substrate (Throw) Distance Variable from ~75 to 125 mm (may affect maximum temperature, temperature uniformity and thickness).
  • Base Pressure of the Main Chamber P < 5 x 10-7 Torr.
  • Operational Wavelength 248 nm (KrF). 

Photo of the PLD 

General Documentation 

PLD SOP (standard operation procedure)

 

Contact

Matt France or Dan Lamont

 

Check Availability

Already have an account?

Reserve this tool with the FOM.

Need an Account?

Get Started

 

Equipment Fee

Fabrication Service 2