Pulse Laser Deposition System (PLD 3000)

The Pulse Laser Deposition System (PLD 3000) provides uniform single and multilayer films deposited by PLD over substrates up to 3 inches in diameter. These systems include complete software packages and can be used to grow combinatorial thin films as well.

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Key Features

  • Maximum Substrate - Can handle one 3” wafer or multiple smaller samples per customer requirement.
  • Maximum Substrate Temperature 950°C (in oxygen) for non-transparent substrates (such as silicon) and 850°C for transparent substrates (such as LaAlO3).
  • Temperature Uniformity ± 3°C across 3” diameter Si substrate.
  • Operating Pressure Range 5 x 10-7 Torr base to 300 mTorr.
  • Target Size 2” diameter targets.
  • Film Thickness Uniformity ± 5% over 90%.
  • Target to Substrate (Throw) Distance Variable from ~75 to 125 mm (may affect maximum temperature, temperature uniformity and thickness).
  • Base Pressure of the Main Chamber P < 5 x 10-7 Torr.
  • Operational Wavelength 248 nm (KrF). 

Photo of the PLD 

General Documentation 

PLD SOP (standard operation procedure)

 

Contact

Matt France

 

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Equipment Fee

Fabrication Service 2