Plasma Enhanced Chemical Vapor Deposition (PECVD)

The Trion Technology Orion III PECVD (Plasma Enhanced Chemical Vapor Deposition) system utilizes plasma to significantly lower the temperatures at which a given film is deposited on a substrate. The Orion III can be used for the controlled deposition of SiNx, SiO₂, and SiOxNy films.

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Key Features

• 300Watts (350-460kHz) bottom-powered electrode
• Substrates up to 5” wafers
• Temperature control from 250 °C  to 400 °C
• High temperature electrode up to 400 °C
• Optimized shower head for uniform deposition
• Gases available: O₂, SiH₄ 5% N₂, N₂, CF₄ 

Key Applications and available processes

• Semiconductor fabrication
• R & D production and application
• Stress controlled silicon nitride and silicon dioxide film deposition
• MEMS

General Documentation

PECVD system SOP (standard operation procedure)

Contact

Matt France or Esta Abelev

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Equipment Fee

Fabrication Service 1