Plasma Enhanced Chemical Vapor Deposition (PECVD)

The Trion Technology Orion III PECVD (Plasma Enhanced Chemical Vapor Deposition) system utilizes plasma to significantly lower the temperatures at which a given film is deposited on a substrate. The Orion III can be used for the controlled deposition of SiNx, SiO2, and SiOxNy films.

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Photo of the PECVD

Key Features

  • 300Watts (350-460kHz) bottom-powered electrode
  • Substrates up to 5” wafers
  • Temperature control from 250 °C  to 400 °C
  • High temperature electrode up to 400 °C
  • Optimized shower head for uniform deposition
  • Gases available: O2, SiH4 5% N2, N2, CF4 

Key Applications and available processes

  • Semiconductor fabrication
  • R & D production and application
  • Stress controlled silicon nitride and silicon dioxide film deposition
  • MEMS

 

General Documentation

PECVD system SOP (standard operation procedure)

Contact

Matt France or Mike McDonald

 

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Equipment Fee

Fabrication Service 1